SSD2009A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SSD2009A Datasheet PDF : 5 Pages
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SSD2009A
Dual N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
Fig 8. On-Resistance vs. Temperature
2.0
1.1
1.6
1.0
ID = 250 µA
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
1.2
VGS = 10 V
ID = 3.0 A
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient
100
Duty Cycle=0.5
10- 1
0.2
0.1
0.05
0.02
10-
2
10-
4
P
DM
Single Pulse
t
1
@ Notes :
t2
1.
Z
θ
J
C
(t)=62.5
o C/W
Max.
2. Duty Factor, D=t1/t2
3.
TJ
M
-TC
=PD
M
*Z
θ
J
C
(t)
4. Surface Mounted
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration [sec]
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