SSF2306B View Datasheet(PDF) - Silikron Semiconductor Co.,LTD.
Part Name
Description
Manufacturer
SSF2306B Datasheet PDF : 5 Pages
| |||
SSF2306B
DESCRIPTION
The SSF2306B uses advanced trench
technology to provide excellent RDS(ON),
low gate charge and operation with gate
voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 29V,ID = 5A
RDS(ON) < 50mΩ @ VGS=2.5V
RDS(ON) < 40mΩ @ VGS=4.5V
RDS(ON) < 35mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
D
G
S
Schematic diagram
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2306B
SSF2306B
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
29
±12
5
20
1.38
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
Min Typ Max
29
1
±100
Unit
V
μA
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
Share Link: 