SSD20N15-250D View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
SSD20N15-250D Datasheet PDF : 2 Pages
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Elektronische Bauelemente
SSD20N15-250D
N-Ch Enhancement Mode Power MOSFET
12A, 150V, RDS(ON) 255mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
1.0
-
-
V VDS= VGS, ID = 250 μA
IGSS
-
-
±100
nA VDS = 0V, VGS= 20V
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
ID(on)
-
-
1
VDS= 120V, VGS= 0V
μA
-
-
25
VDS= 120V, VGS= 0V, TJ=55°C
34
-
-
A VDS = 5V, VGS= 10V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
RDS(ON)
gfs
VSD
-
-
255
-
-
290
-
4.4
-
-
1.1
-
Dynamic b
VGS= 10V, ID= 9.2 A
mΩ
VGS= 5.5V, ID= 6.1 A
S VDS= 40V, ID= 5.5 A
V IS= 9 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
-
19
-
-
3
-
VDS = 25 V
nC VGS = 10 V
Qgd
-
9.5
-
ID = 9 A
Turn-on Delay Time
Td(on)
-
25
-
Rise Time
Tr
-
60
-
Turn-off Delay Time
Td(off)
-
65
-
Fall Time
Tf
-
45
-
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
VDD= 100 V
nS
ID= 9 A
VGEN = 10 V
RL= 25
http://www.SeCoSGmbH.com/
22-Jul-2010 Rev.A
Any changes of specification will not be informed individually.
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