SSS2N60A View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

SSS2N60A

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

Lower RDS(ON) : 3.892 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25 oC )

Continuous Drain Current (TC=100 oC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TC=25 oC )

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

SSS2N60A

BVDSS = 600 V

RDS(on) = 5 Ω

ID = 1.3 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

Value

600

1.3

0.82

6

+_ 30

138

1.3

2.3

3.0

23

0.18

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/ oC

oC

Thermal Resistance

Symbol

R θJC

R θJA

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

--

--

Max.

5.5

62.5

Units

oC/W

©1999 Fairchild Semiconductor Corporation

Rev. B

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