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SST25VF020 View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
Manufacturer
SST25VF020
SST
Silicon Storage Technology SST
SST25VF020 Datasheet PDF : 23 Pages
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Data Sheet
Status Register
The software status register provides status on whether the
flash memory array is available for any Read or Write oper-
ation, whether the device is Write enabled, and the state of
the memory Write protection. During an internal Erase or
2 Mbit SPI Serial Flash
SST25VF020
Program operation, the status register may be read only to
determine the completion of an operation in progress.
Table 4 describes the function of each bit in the software
status register.
TABLE 4: Software Status Register
Bit Name
0 BUSY
1 WEL
2 BP0
3 BP1
4:5 RES
6 AAI
7 BPL
Function
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
Indicate current level of block write protection (See Table 5)
Indicate current level of block write protection (See Table 5)
Reserved for future use
Auto Address Increment Programming status
1 = AAI programming mode
0 = Byte-Program mode
1 = BP1, BP0 are read-only bits
0 = BP1, BP0 are read/writable
Busy
The Busy bit determines whether there is an internal Erase
or Program operation in progress. A “1” for the Busy bit indi-
cates the device is busy with an operation in progress. A “0”
indicates the device is ready for the next valid operation.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the inter-
nal memory Write Enable Latch. If the Write-Enable-Latch
bit is set to “1”, it indicates the device is Write enabled. If the
bit is set to “0” (reset), it indicates the device is not Write
enabled and does not accept any memory Write (Program/
Erase) commands. The Write-Enable-Latch bit is automati-
cally reset under the following conditions:
Power-up
Write-Disable (WRDI) instruction completion
Byte-Program instruction completion
Auto Address Increment (AAI) programming
reached its highest memory address
Sector-Erase instruction completion
Block-Erase instruction completion
Chip-Erase instruction completion
Default at
Power-up
0
0
1
1
0
0
Read/Write
R
R
R/W
R/W
N/A
R
0
R/W
T4.0 1231
©2006 Silicon Storage Technology, Inc.
6
S71231-07-000
10/06

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