SST36VF1601C View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

Manufacturer

SST36VF1601C

16 Mbit (x8/x16) Dual-Bank Flash Memory

Silicon Storage Technology 

16 Mbit Dual-Bank Flash Memory

SST36VF1601C / SST36VF1602C

EOL Data Sheet

TABLE 9: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V

Limits

Symbol

IDD1

Parameter

Active VDD Current

Read

Freq Min

Max

5 MHz

15

1 MHz

10

Program and Erase

40

ISB

Standby VDD Current

20

IALP

Auto Low Power VDD Current

20

IRT

ILI

ILIW

ILO

VIL

VILC

VIH

VIHC

VOL

VOH

Reset VDD Current

Input Leakage Current

Input Leakage Current

on WP# pin and RST# pin

Output Leakage Current

Input Low Voltage

Input Low Voltage (CMOS)

Input High Voltage

Input High Voltage (CMOS)

Output Low Voltage

Output High Voltage

20

1

10

1

0.8

0.3

0.7 VDD

VDD-0.3

0.2

VDD-0.2

1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 21)

Units Test Conditions

mA CE#=OE#=VIL, WE#=VIH,

mA All I/Os open

mA CE#=WE#=VIL, OE#=VIH

µA CE#, RST#=VDD±0.3V

µA CE#=0.1V, VDD=VDD Max

WE#=VDD-0.1V

Address inputs=0.1V or VDD-0.1V

µA RST#=GND

µA

VIN =GND to VDD, VDD=VDD Max

µA WP#=GND to VDD, VDD=VDD Max

RST#=GND to VDD, VDD=VDD Max

µA

VOUT =GND to VDD, VDD=VDD Max

V

VDD=VDD Min

V

VDD=VDD Max

V

VDD=VDD Max

V

VDD=VDD Max

V

IOL=100 µA, VDD=VDD Min

V

IOH=-100 µA, VDD=VDD Min

T9.3 1249

TABLE 10: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Write Operation

100

µs

T10.0 1249

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 11: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

10 pF

CIN1

Input Capacitance

VIN = 0V

10 pF

T11.0 1249

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 12: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

TDR1

Endurance

Data Retention

10,000

100

Cycles JEDEC Standard A117

Years JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA JEDEC Standard 78

T12.0 1249

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2006 Silicon Storage Technology, Inc.

16

S71249-07-EOL

02/08

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