SST39VF160Q-70 View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

Manufacturer

SST39VF160Q-70

16 Megabit (1M x 16-Bit) Multi-Purpose Flash

Silicon Storage Technology 

16 Megabit Multi-Purpose Flash

SST39VF160Q / SST39VF160

Advance Information

TABLE 6: SYSTEM INTERFACE INFORMATION

Address

Data

Data

1BH

0027H

Vdd Min. (Program/erase)

1

DQ4-DQ7: Volts, DQ3-DQ0: millivolts

1CH

0036H

Vdd Max. (Program/erase)

DQ4-DQ7: Volts, DQ3-DQ0: millivolts

2

1DH

0000H

Vpp min. (00H = no Vpp pin)

1EH

0000H

Vpp max. (00H = no Vpp pin)

1FH

0003H

Typical time out for word program 2N µs

3

20H

0000H

Typical time out for min. size buffer program 2N µs (00H = not supported)

21H

0001H

Typical time out for individual sector erase 2N ms

4

22H

0009H

Typical time out for chip erase 2N ms

23H

0001H

Maximum time out for word program 2N times typical

24H

0000H

Maximum time out for buffer program 2N times typical

5

25H

0001H

Maximum time out for individual sector erase 2N times typical

26H

0001H

Maximum time out for chip erase 2N times typical

6

329 PGM T6.2

7

TABLE 7: DEVICE GEOMETRY INFORMATION

Address

Data

Data

8

27H

0015H

Device size = 2N byte

28H

0001H

Flash Device Interface description (Refer to CFI publication 100)

9

29H

0000H

2AH

0000H

Maximum number of byte in multi-byte write = 2N (00H = not supported)

2BH

0000H

10

2CH

0002H

Number of Erase Block Regions within device

2DH

00FFH

Erase Block Region 1 Information

2EH

0001H

(refer to the CFI specification or publication 100)

11

2FH

0010H

y = 511 + 1 = 512 sectors (01FF = 511)

30H

0000H

z = 16 x 256 bytes = 4K bytes/sector (0010H = 16)

31H

001FH

Erase Block Region 2 Information

12

32H

0000H

(refer to the CFI specification or publication 100)

33H

0000H

y = 31 + 1 = 32 blocks (001F = 31)

34H

0001H

z = 256 x 256 bytes = 64K bytes/block (0100H = 256)

13

35H

0000H

Erase Block Region 3 Information

36H

0000H

(refer to the CFI specification or publication 100)

37H

0000H

38H

0000H

14

39H

0000H

Erase Block Region 3 Information

3AH

0000H

(refer to the CFI specification or publication 100)

3BH

0000H

15

3CH

0000H

329 PGM T7.3

16

© 1998 Silicon Storage Technology, Inc.

7

329-09 11/98

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