ST10F271 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

ST10F271

16-bit MCU with 128 Kbyte Flash memory and 12 Kbyte RAM

STMicroelectronics 

ST10F271

Internal Flash memory

5.4.4

5.4.5

Flash control register 1 high

The Flash Control Register 1 High (FCR1H), together with Flash Control Register 1 Low

(FCR1L), is used to select the Sectors to Erase, or during any write operation to monitor the

status of each Sector and Bank.

FCR1H (0x08 0006)

15 14 13 12 11 10

reserved

FCR

987

B0S

RS

Reset value: 0000h

6543210

reserved

Table 10.

Bit

B0S

Flash control register 1 high

Function

Bank 0 Status (IFLASH)

During any erase operation, this bit is automatically modified and gives the status

of the Bank 0. The meaning of B0S bit is given in the next Table 4 Banks (BxS) and

Sectors (BxFy) Status bits meaning. This bit is automatically reset at the end of a

erase operation if no errors are detected.

During any erase operation, this bit is automatically set and gives the status of the Bank 0.

The meaning of B0Fy bit for Sector y of Bank 0 is given by the next Table 4 Banks (BxS) and

Sectors (BxFy) Status bits meaning. These bits are automatically reset at the end of an

erase operation if no errors are detected.

Table 11. Banks (BxS) and sectors (BxFy) status bits meaning

ERR SUSP

B0S = 1 meaning

B0Fy = 1 meaning

1

- Erase Error in Bank 0

Erase Error in Sector y of Bank 0

0

1 Erase Suspended in Bank 0

Erase Suspended in Sector y of Bank 0

0

0 Don’t care

Don’t care

Flash data register 0 low

The Flash Address Registers (FARH/L) and the Flash Data Registers (FDR1H/L-FDR0H/L)

are used during the program operations to store Flash Address in which to program and

Data to program.

FDR0L (0x08 0008)

FCR

Reset value: FFFFh

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0

RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW

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