STA501 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STA501 Datasheet PDF : 8 Pages
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STA501
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCE
DC Supply Voltage (Pin 4,7,12,15)
Vmax Maximum Voltage on pins 23 to 32
Top
Operating Temperature Range
Tstg, Tj Storage and Junction Temperature
Value
40
5.5
0 to 70
-40 to 150
Unit
V
V
°C
°C
THERMAL DATA
Symbol
Tj-case
TjSD
Twarn
thSD
Parameter
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
Thermal warning temperature
Thermal shut-down hysteresis
Min.
Typ.
150
130
25
Max.
2.5
Unit
°C/W
°C
°C
°C
ELECTRICAL CHARACTERISTCS (Ibias = 3.3V; Vcc = 30V; Tamb = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
200 270 mΩ
Idss Power Pchannel/Nchannel
leakage Idss
Vcc=35V
50
µA
gN Power Pchannel RdsON
Matching
Id=1A
95
%
gP Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1
10
20
ns
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8 Ω
Id=3.5A; see fig. 3
50
ns
td ON Turn-on delay time
Resistive load
100
ns
td OFF Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load
25
ns
tf
Fall time
Resistive load; as fig. 1
25
ns
VCC Supply voltage operating voltage
10
36
V
VIN-H High level input voltage
Ibias/2 V
+300mV
VIN-L Low level input voltage
Ibias/2
V
-300mV
IIN-H Hi level Input current
Pin voltage = Ibias
1
µA
4/8
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