STB70NF3LLT4 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STB70NF3LLT4

N-CHANNEL 30V - 0.0075 Ω - 70A D²PAK/TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET

STMicroelectronics 

STB70NF3LL STP70NF3LL

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

td(on)

Turn-on Delay Time

VDD = 15 V

ID = 35 A

23

ns

tr

Rise Time

RG = 4.7 Ω

VGS = 4.5 V

156

ns

(Resistive Load, Figure 3)

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD= 15V ID= 70A VGS= 4.5V

24

33

nC

8.5

nC

12

nC

SWITCHING OFF

Symbol

Parameter

td(off)

tf

Turn-off Delay Time

Fall Time

Test Conditions

VDD = 15 V

ID = 35 A

RG = 4.7Ω,

VGS = 4.5 V

(Resistive Load, Figure 3)

Min.

Typ.

27

28

Max.

Unit

ns

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

VSD (*) Forward On Voltage

ISD = 70 A

VGS = 0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(•)Pulse width limited by safe operating area.

ISD = 70 A

di/dt = 100A/µs

VDD = 25 V

Tj = 150°C

(see test circuit, Figure 5)

Min.

Typ.

40

50

2.5

Max.

70

280

1.3

Unit

A

A

V

ns

nC

A

Safe Operating Area

Thermal Impedance

3/10

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