18N65M5(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

18N65M5
(Rev.:2012)

N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages

STMicroelectronics 

STB18N65M5, STD18N65M5

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

VGS

(V)

12

VDS

10

VDD=520V

ID=7.5A

AM12474v1

VDS

(V)

500

400

RDS(on)

(Ω)

0.24

0.23

0.22

VGS=10V

AM12475v1

8

0.21

300

6

0.2

200

0.19

4

0.18

2

100

0.17

0

0 5 10 15 20 25 30

0

Qg(nC)

0.16

0 2 4 6 8 10 12 14 ID(A)

Figure 10. Capacitance variations

C

(pF)

10000

1000

Figure 11. Output capacitance stored energy

AM12476v1

Eoss

(µJ)

AM12484v1

6

5

Ciss

4

100

Coss

10

Crss

1

0.1

1

10

100 VDS(V)

3

2

1

0

0

200

400

600

VDS(V)

Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

AM12471v1

ID = 250 µA

VDS = VGS

RDS(on)

(norm)

2.1

1.9

1.7

VGS= 10V

ID= 7.5 A

AM12483v1

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Doc ID 023446 Rev 1

7/18

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