STGD3NB60ST4(1999) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STGD3NB60ST4
(Rev.:1999)

N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT

STMicroelectronics 

®

STGD3NB60S

N-CHANNEL 3A - 600V DPAK

Power MESH™ IGBT

TYPE

V CES

VCE(s a t )

IC

STGD3NB60S

600 V < 1.5 V

3A

s HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s VERY LOW ON-VOLTAGE DROP (Vcesat)

s HIGH CURRENT CAPABILITY

s OFF LOSSES INCLUDE TAIL CURRENT

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

perfomances. The suffix ”S” identifies a family

optimized to achieve minimum on-voltage drop

for low frequency applications (<1kHz).

PRELIMINARY DATA

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s LIGHT DIMMER

s STATIC RELAYS

s MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

VCES Collector-Emitter Volt age (VGS = 0)

VECR

VGE

IC

IC

Reverse Battery Protection

G ate-Emitter Voltage

Collector Current (continuous) at Tc = 25 oC

Collector Current (continuous) at Tc = 100 oC

ICM(•)

Ptot

Collector Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

Ts tg Storage T emperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1999

Value

600

20

± 20

6

3

24

40

0. 32

-65 to 150

150

Un it

V

V

V

A

A

A

W

W /o C

oC

oC

1/8

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