STGD3NB60ST4(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGD3NB60ST4 Datasheet PDF : 8 Pages
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STGD3NB60S
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
3.125
100
1. 5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
P ar am et e r
VBR(CES) Collector-Emitt er
Breakdown Voltage
ICES
IGES
Collector cut-off
(VGE = 0)
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rat ing
VCE = Max Rat ing
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ. Max.
10
100
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGE(th)
VCE(SAT )
P ar am et e r
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
VGE = 15 V IC = 3 A
VGE = 15 V IC = 1 A
Min.
2.5
Typ.
Max.
5
Unit
V
1.2
1.5
V
1
V
DYNAMIC
Symbo l
gf s
Cies
Co es
Cres
QG
QGE
QGC
ICL
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE =25 V
IC = 3 A
VCE = 25 V f = 1 MHz VGE = 0
VCE = 480 V IC = 3 A VGE = 15 V
Vclamp = 480 V RG=1kΩ
Tj = 150 oC
Min.
1.7
12
Typ.
2.5
255
30
5.6
18
5.4
5.5
Max.
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Eo n
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching
Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 3 A
RG = 1kΩ
VCC = 480 V
RG = 1kΩ
Tj = 125 oC
IC = 3 A
V GE = 15 V
Min.
T yp.
170
540
30
300
M ax .
Unit
ns
ns
A/µ s
µJ
2/8
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