STGW20NB60HD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGW20NB60HD Datasheet PDF : 8 Pages
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STGW20NB60HD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tc
Cross-O ver Time
VCC = 480 V
IC = 20 A
115
ns
tr(voff) Off Volt age Rise Time RGE = 10 Ω
VGE = 15 V
32
ns
td (o ff) Delay Time
170
ns
tf
Fall Time
75
ns
Eoff(**) Turn-off Switching Loss
0.4
mJ
Ets(r) Total Switching Loss
0.9
mJ
tc
Cross-O ver Time
VCC = 480 V
IC = 20 A
190
ns
tr(voff) Off Volt age Rise Time RGE = 10 Ω
VGE = 15 V
55
ns
td (o ff) Delay Time
Tj = 125 oC
210
ns
tf
Fall Time
140
ns
Eoff(**) Turn-off Switching Loss
0.7
mJ
Ets(r) Total Switching Loss
1.25
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
T est Conditions
If
Forward Current
Ifm
Forward Current pulsed
Vf
Forward On-Voltage
If = 20 A
If = 20 A
trr
Reverse Recovery Time
If = 20 A
Qrr
Reverse Recovery Charge dI/dt = 100 A/µS
Irrm Reverse Recovery Current
(•) Pulse width limited by max. junction temperature
(r) Include recovery losses on the STTA2006 freewheeling diode
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Tj = 125 oC
VR= 200 V
Tj = 125 oC
Min.
Typ. Max. Unit
20 A
160 A
1.50 2.0 V
1.25
V
100
nS
300
nC
5.9
A
Thermal Impedance
3/8
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