D95N04(2005) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
D95N04
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
D95N04 Datasheet PDF : 14 Pages
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2 Electrical characteristics
STD95N04 - STP95N04
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Turn-off Delay Time
FallTime
Test Conditions
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 12)
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 12)
Table 6. Source drain diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM Note 2 Source-drain Current (pulsed)
VSDNote 6 Forward on Voltage
ISD=80A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=80A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
Min.
Min.
Typ. Max. Unit
15
ns
50
ns
40
ns
15
ns
Typ.
45
60
2.8
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj≤ Tjmax
(4) Starting Tj=25°C, Id =40A, Vdd=30V
(5) When mounted on 1inch² FR4 2Oz Cu board
(6)Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/14
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