STPS2L25UF View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2L25UF Datasheet PDF : 9 Pages
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Characteristics
STPS2L25
Figure 7.
Normalized avalanche power
derating versus junction
temperature
Figure 8.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMB
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Zth(j-a)/Rth(j-a)
1.0
SMB
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
Tj(°C)
0.1 Single pulse
75
100
125
150
0.0
tp(s)
δ=tp/T
tp
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 9.
Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Figure 10. Reverse leakage current versus
reverse voltage applied (typical
values)
Zth(j-l)/Rth(j-l)
1.0
SMB flat
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-04
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
1.E+01
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
5
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
VR(V)
10
15
20
25
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Figure 12. Forward voltage drop versus
forward current (typical values)
IFM(A)
10.0
Tj=125°C
100
Tj=150°C
1.0
Tj=25°C
10
1
VR(V)
10
VFM(V)
0.1
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
4/9
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