STPS2L30(2008) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2L30 Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS2L30
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
SMA flat
TL = 130 °C δ = 0.5
IF(AV)
Average forward current
SMA
TL = 120 °C δ = 0.5
SMB flat
TL = 135 °C δ = 0.5
IFSM
Surge non repetitive forward current
tp =10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg
Storage temperature range
Tj
Operating junction temperature (1)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Rth(j-l) Junction to lead
SMA flat
SMA
SMB flat
Value
30
2
75
1500
-65 to + 150
150
Value
20
30
15
Unit
V
A
A
W
°C
°C
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(1) Forward voltage drop
Tj = 25 °C
Tj = 100 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 2 A
IF = 4 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.24 x IF(AV) + 0.068 IF2(RMS)
200 µA
6
15 mA
0.45
0.325 0.375
V
0.53
0.43 0.51
2/10
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