STPS2L30(2008) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2L30 Datasheet PDF : 10 Pages
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STPS2L30
Characteristics
Figure 13. Reverse leakage current versus
reverse voltage applied (typical
values)
IR(mA)
1.E+02
1.E+01
1.E+00
Tj=150°C
Tj=125°C
Tj=100°C
1.E-01
1.E-02
1.E-03
0
Tj=25°C
VR(V)
5
10
15
20
25
30
Figure 14. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
10
100
Figure 15. Forward voltage drop versus
forward current (high level)
10.0 IFM(A)
Figure 16. Forward voltage drop versus
forward current ( low level)
3.0 IFM(A)
Tj=125 °C
(maximum values)
2.5
2.0
Tj=125 °C
(maximum values)
1.0
Tj=125 °C
(typical values)
Tj=25 °C
(maximum values)
VFM(V)
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.5
Tj=125 °C
1.0
(typical values)
Tj=25 °C
(maximum values)
0.5
VFM(V)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 17.
Thermal resistance junction to
Figure 18.
ambient versus copper surface
under each lead (epoxy printed
board FR4, copper
thickness = 35 µm) (SMA, SMB flat)
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, copper
thickness = 35 µm) (SMA flat)
Rth(j-a)(°C/W)
130
120
110
100
90
SMA
80
70
60
50
SMB flat)
40
30
20
10
SCU(Cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Rth(j-a)(°C/W)
200
180
SMA-Flat
160
140
120
100
80
60
40
20
SCU(Cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5/10
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