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STPS3030CG-TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS3030CG-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS3030CG-TR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STPS3030CT/CG/CR
Characteristics
Figure 1.
P(W)
10
9
8
7
6
5
4
3
2
1
0
0
2
Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
IF(av)(A)
18
16
14
12
Rth(j-a)=Rth(j-c)
10
8
6
T
4
Rth(j-a)=50°C/W
IF(av)(A)
2
δ=tp/T
tp
0
4
6
8
10 12 14 16 18 20
0
Tamb(°C)
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
0.01
0.1
tp(µs)
1
10
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Figure 5.
IM(A)
250
225
200
175
150
125
100
75
50
25
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values)
t(s)
1.E-02
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
3/9

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