STTA306B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STTA306B Datasheet PDF : 8 Pages
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Fig. 1: Conduction losses versus average current.
P1(W)
3.0
2.5
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
2.0
δ=1
1.5
1.0
0.5
IF(av) (A)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
STTA306B
Fig. 2: Forward voltage drop versus forward
current (maximum values).
IFM(A)
5E+1
1E+1
1E+0
Tj=125°C
Tj=25°C
1E-1
VFM(V)
1E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 3: Relative variation of thermal transient
impedance junction to ambient versus pulse
duration (recommended pad layout).
Zth(j-a) (°C/W)
1E+0
δ = 0.5
δ = 0.2
1E-1 δ = 0.1
1E-2
Single pulse
1E-3
1E-3
1E-2
tp(s)
1E-1 1E+0
T
δ=tp/T
tp
1E+1 1E+2 5E+2
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence).
IRM(A)
9
VR=400V
8 Tj=125°C
7
6
IF=2*IF(av)
5
4
IF=IF(av)
3
2
1
dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
350
300
VR=400V
Tj=125°C
250
200
150
IF=2*IF(av)
100
50
0
0
dIF/dt(A/µs)
IF=IF(av)
20 40 60 80 100 120 140 160 180 200
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
S factor
1.6
1.4
1.2
IF<2*IF(av)
VR=400V
Tj=125°C
1.0
0.8
0.6
0.4
0.2
0
dIF/dt(A/µs)
20 40 60 80 100 120 140 160 180 200
3/8
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