STTH12003TV1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STTH12003TV1

HIGH FREQUENCY SECONDARY RECTIFIER

STMicroelectronics 

STTH12003TV

Fig. 7: Relative variation of dynamic parameters

versus junction temperature (reference:Tj = 125°C).

Fig. 8: Transient peak forward voltage versus

dIF/dt (90% confidence, per diode).

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25

S factor

IRM

Tj(°C)

50

75

100

VFP(V)

10

IF=IF(av)

Tj=125 °C

8

6

4

2

dIF/dt(A/µs)

125

0

0 50 100 150 200 250 300 350 400 450 500

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence, per diode).

tfr(ns)

500

400

IF=IF(av)

VFR=1.1*VFmax

Tj=125 °C

300

200

100

0

0

dIF/dt(A/µs)

50 100 150 200 250 300 350 400 450 500

4/5

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