STTH2003C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STTH2003C Datasheet PDF : 11 Pages
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Characteristics
STTH2003C
Figure 1.
Conduction losses versus average Figure 2.
forward current (per diode)
Forward voltage drop versus
forward current (maximum values,
per diode)
P1(W)
14
12
10
8
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IFM(A)
200
100
Tj=125°C
Tj=25°C
6
10
Tj=75°C
4
T
2
0
IF(AV)(A)
δ=tp/T
tp
1
VFM(V)
0
2
4
6
8
10
12
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration (TO-220AB / D2PAK /
I2PAK)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-22FP0AB)
Zth(j-c)/Rth(j-c)
1.0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
tp
1E+0
δ = 0.2
0.4
δ = 0.1
0.2 Single pulse
0.0
1E-2
T
tp(s)
δ=tp/T
tp
1E-1
1E+0
1E+1
Figure 5.
Peak reverse recovery current
Figure 6.
versus dIF/dt (90% confidence, per
diode)
Reverse recovery time versus dIF/dt
(90% confidence, per diode)
IRM(A)
16
14
VR=200V
Tj=125°C
12
10
8
6
IF=0.5 x IF(AV)
IF=IF(AV)
IF=2 x IF(AV)
trr(ns)
100
80
60
40
IF=IF(AV)
IF=2 x IF(AV)
IF=0.5 x IF(AV)
VR=200V
Tj=125°C
4
20
2
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50 100 150 200 250 300 350 400 450 500
0
50 100 150 200 250 300 350 400 450 500
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