STTH2003C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STTH2003C Datasheet PDF : 11 Pages
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STTH2003C
Characteristics
Figure 7. Softness factor (tb/ta) versus dIF/dt Figure 8.
(typical values, per diode)
S factor
2.4
0.60
2.2
0.50
VR=200V
2.0
Tj=125°C
1.8
1.6
0.40
1.4
0.30
1.2
1.0
0.20
0.8
0.6
0.10
0.00
0
0.4
dIF/dt(A/µs)
0.2
0.0
50 100 150 200 250 300 350 400 450 500
25
Relative variation of dynamic
parameters versus junction
temperature (reference: Tj = 125°C)
S factor
IRM
Tj(°C)
50
75
100
125
Figure 9.
VFP(V)
10
IF=IF(AV)
Tj=125°C
8
Transient peak forward voltage
Figure 10. Forward recovery time versus dIF/dt
versus dIF/dt (90% confidence, per
(90% confidence, per diode)
diode) (TO-220AB)
tfr(ns)
500
400
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
6
300
4
200
2
100
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 11.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) (D2PAK).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
5/11
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