W52NK25Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
W52NK25Z Datasheet PDF : 10 Pages
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STW52NK25Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤52A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering Purpose
Value
250
250
± 30
52
32.76
208
300
2.38
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
0.42
30
300
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
52
A
500
mJ
Table 6: GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source Breakdown Igs=± 1mA (Open Drain)
Voltage
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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