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W52NK25Z View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
W52NK25Z Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STW52NK25Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
250
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 150 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 26 A
0.033 0.045
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 26 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 200 V
VDD = 125V, ID = 26 A
RG = 4.7VGS = 10 V
(see Figure 17)
VDD = 200 V, ID = 52 A,
VGS = 10V
Min.
Typ. Max. Unit
25
S
4850
pF
855
pF
222
pF
720
pF
40
ns
75
ns
115
ns
55
ns
160
nC
32
nC
87
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
52
A
208
A
VSD (1) Forward On Voltage
ISD = 52 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 52 A, di/dt = 100A/µs
VDD = 100 V, Tj = 25°C
(see Figure 18)
285
ns
0.285
µC
2
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 52 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see Figure 18)
336
ns
0.37
µC
2.2
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/10

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