SUM110N06-04L View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SUM110N06-04L Datasheet PDF : 5 Pages
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SUM110N06-04L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 30 A
2.0
Source-Drain Diode Forward Voltage
1.5
TJ = 150_C
TJ = 25_C
10
1.0
0.5
0.0
–50 –25 0 25 50 75 100 125 150 175 200
TJ – Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
1000
100
Avalanche Current vs. Time
IAV (A) @ TA = 25_C
10
1
IAV (A) @ TA = 150_C
0.1
0.00001 0.0001
0.001
0.01
0.1
tin (Sec)
Drain Source Breakdown vs.
Junction Temperature
80
75
ID = 10 mA
70
65
60
–50 –25 0 25 50 75 100 125 150 175 200
TJ – Junction Temperature (_C)
www.vishay.com
4
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
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