SUM110N02-03P View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SUM110N02-03P Datasheet PDF : 5 Pages
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SUM110N02-03P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 125_C
VDS = 16 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargeb
Gate-Source Chargeb
Gate-Drain Chargeb
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10V, VGS = 4.5 V, ID = 110 A
Gate Resistance
RG
Turn-On Delay Timeb
Rise Timeb
Turn-Off Delay Timeb
Fall Timeb
td(on)
tr
td(off)
tf
VDD = 10 V, RL = 0.2 W
ID ^ 110 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
IF = 110 A, VGS = 0 V
trr
IRM
IF = 50 A, di/dt = 100 A/ms
Qrr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20
V
0.8
3
"100
nA
1
50
mA
250
120
A
0.0026 0.0032
0.0048
W
0.0055
0.0042
0.052
15
S
5100
1650
pF
750
40
60
14
nC
13
0.85
W
15
25
11
20
ns
45
70
10
15
110
A
300
1.1
1.5
V
45
70
ns
1.8
2.7
A
0.041
0.095
mC
www.vishay.com
2
Document Number: 72096
S-22451—Rev. A, 20-Jan-03
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