SUM110N02-03P View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SUM110N02-03P Datasheet PDF : 5 Pages
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New Product
SUM110N02-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
200
VGS = 10 thru 5 V
200
160
4V
150
120
100
80
50
0
0
3V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
40
0
0
Transconductance
200
TC = -55_C
160
25_C
120
125_C
80
40
0.0060
0.0045
0.0030
0.0015
Transfer Characteristics
TC = 125_C
25_C
-55 _C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0
0
15
30
45
60
ID - Drain Current (A)
7000
Capacitance
6000
Ciss
5000
4000
3000
2000
Crss
1000
Coss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Document Number: 72096
S-22451—Rev. A, 20-Jan-03
0.0000
0
10
20
40
60
80
100
ID - Drain Current (A)
Gate Charge
8
VDS = 10 V
ID = 50 A
6
4
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
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