NEZ7785-8D1-8DD View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

NEZ7785-8D1-8DD

15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

15 W C-BAND Po GaAs FET NEZ SERIES

15W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Zs = ZL = 50 Ω)

p1dB

GL

IDS

∆GL

IM3

ηadd

(dBm)

(dB)

PART NUMBER

*1

(A)

(dB)

(dBc)

(%) VDS

*2

*3,4

*4

MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V)

NEZ3642-15D 41.5 42.5 9.0 10.0 4.8 6.0 –

–

– 35 10

NEZ3642-15DD 41.5 42.5 9.0 10.0 4.8 6.0 1.0 – –42 35 10

NEZ4450-15D 41.5 42.5 9.0 10.0 4.8 6.0 –

–

– 35 10

NEZ4450-15DD 41.5 42.5 9.0 10.0 4.8 6.0 1.0 – –42 35 10

NEZ5964-15D 41.5 42.5 8.0 9.0 4.8 6.0 –

–

– 33 10

NEZ5964-15DD 41.5 42.5 8.0 9.0 4.8 6.0 1.0 – –42 33 10

NEZ6472-15D 41.5 42.5 6.5 7.5 4.8 6.0 –

–

– 31 10

NEZ6472-15DD 41.5 42.5 6.5 7.5 4.8 6.0 1.0 – –42 31 10

NEZ7785-15D 41.5 42.5 6.0 7.0 4.8 6.0 –

–

– 27 10

TEST CONDITIONS

IDS FREQUENCY IM3 TEST

*5 BAND

FREQ.

(A)

(GHz)

(GHz)*6

4.0

3.6 to 4.2

4.0

3.6 to 4.2

4.0

4.4 to 5.0

4.0

4.4 to 5.0

4.0 5.9 to 6.45

4.0 5.9 to 6.45

4.0

6.4 to 7.2

4.0

6.4 to 7.2

4.0

7.7 to 8.5

–

4.2

–

5.0

–

6.45

–

7.2

–

Notes *1 Output power at 1 dB gain compression point

*2 IDS values are specified at P1dB point.

*3 Gain flatness

*4 Applies to –15DD option only

*5 RF OFF

*6 IM3 test conditions: ∆ f = 10 MHz, 2 tones test, PO = 31.5 dBm (single carrier level)

MAXIMUM OPERATING LIMITS

Rg max. (Ω)

50

VDS max. (V)

10

Rg max is the maximum series resistance between the gate supply and the FET gate.

3

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