SW1N60L View Datasheet(PDF) - Xian Semipower Electronic Technology Co., Ltd.
Part Name
Description
Manufacturer
SW1N60L Datasheet PDF : 7 Pages
| |||
SAMWIN
SW1N60L
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 23 Ω)@VGS=10V
■ Gate Charge (Max 4.5nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-92
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
BVDSS : 600V
ID
: 0.3A
RDS(ON) : 23ohm
2
1
3
Order Codes
Item
1
Sales Type
SW C 1N60L
Marking
SW1N60L
Package
TO-92
Packaging
TAPE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
600
0.3
0.18
1.2
± 30
33
0.3
4.5
1
0.02
-55 ~ + 150
300
Thermal characteristics
Symbol
RthCL
RthjA
Parameter
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
Value
50
140
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
1/7
Share Link: 