T2035H-600TRG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
T2035H-600TRG Datasheet PDF : 10 Pages
| |||
Characteristics
1
Characteristics
T2035H Series
Table 1. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
ITSM
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle sine wave, Tj initial = 25° C)
F = 60 Hz
F = 50 Hz
Tc = 127° C
t = 16.7 ms
t = 20 ms
I²t
I²t Value for fusing
tp = 10 ms
dI/dt
VDSM/VRSM
IGM
PG(AV)
Tstg
Tj
TI
Critical rate of rise of on-state current
IG = 2xIGT, tr ≤100 ns
Non repetitive surge peak off state voltage
F = 120 Hz
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Maximum leads soldering temperature during 10 s
Tj = 125° C
Tj = 25° C
Tj = 150° C
Tj = 150° C
Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test conditions
Quadrant
IGT (1)
VGT
VGD
IH (2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL =3.3 kΩ, Tj = 150° C
IT = 100 mA
I - II - III
I - II - III
I - II - III
MAX
MAX
MIN
MAX
IL
IG = 1.2 x IGT
I - III
II
MAX
dV/dt (2) VD = 67% VDRM, gate open, Tj = 150° C
MIN
(dI/dt)c (2) Without snubber, Tj = 150° C
MIN
1. minimum IGT is guaranteed at 5% of IGT max
2. for both polarities of A2 referenced to A1
Value Unit
20
A
210
A
200
283
A2s
50
A/µs
700
V
4
A
1
W
-40 to +150
°C
-30 to +150
260
°C
Value
35
1.3
0.15
35
50
80
300
8.9
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/10
Share Link: 