T2035H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
T2035H Datasheet PDF : 10 Pages
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T2035H, T2050H
Characteristics
Table 4. Static characteristics
Symbol
Test Conditions
VT (1)
Vt0 (1)
Rd (1)
IDRM
IRRM (2)
ITM = 28 A, tp = 380 µs
Tj = 25 °C
Threshold voltage
Tj = 150 °C
Dynamic resistance
Tj = 150 °C
VDRM = VRRM
Tj = 25 °C
Tj = 150 °C
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
1. for both polarities of A2 referenced to A1.
2. tp = 380 µs.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case (AC)
TO-220AB, D2PAK
TO-220AB Ins
Rth(j-a)
Junction to ambient
S = 1 cm2
TO-220AB, TO-220AB Ins
D2PAK
Value
Unit
1.5
V
0.80
V
19
mΩ
5
µA
6.2
5.0
mA
4.0
Value
1
1.9
60
45
Unit
°C/W
Figure 1.
P(W)
24
22
α=180 °
20
18
16
14
12
10
8
6
4
2
0
0
2
Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current
temperature
180°
IT(RMS)(A)
4
6
8
10 12 14 16 18 20
IT(RMS) (A)
22
20
18
16
14
12
10
8
6
4
2
α=180 °
0
0
25
TO-220AB/D²PAK
TO-220AB
Insulated
TC(°C)
50
75
100
125
150
3/10
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