T2035H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
T2035H Datasheet PDF : 10 Pages
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T2035H, T2050H
Characteristics
Figure 9.
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
(typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)C (V/µs)
1.0
10.0
100.0
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
25
50
75
100
125
150
Figure 11. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
IDRM/IRRM(µA)
1.0E+04
1.0E+03
1.0E+02
VDRM=VRRM=600 V
VDRM=VRRM=400 V
VDRM=VRRM=200 V
1.0E+01
1.0E+00
1.0E-01
50
Tj(°C)
75
100
125
150
Figure 12. Acceptable repetitive peak off-state
voltage versus case to ambient
thermal resistance
Rth(c-a) (°C/W)
40
35
Rth(j-c)=1.0 °C/W
TJ=150 °C
30
25
20
15
10
5
VDRM/VRRM(V)
0
300
350
400
450
500
550
600
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
80
70
D²PAK
60
50
40
30
20
10
0
0
SCU(cm²)
5
10
15
20
25
30
35
40
5/10
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