T2096 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

T2096

HIGH VOLTAGE TRANSISTOR

Unisonic Technologies 

T2096

NPN SILICON TRANSISTOR

 ABSOLUATE MAXIUM RATINGS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

800

V

VCES

800

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

400

V

VEBO

8

V

Base Current

DC Collector Current

IB

1

A

IC

2

A

Pulse Collector Current (Note 2)

ICP

Collector Dissipation

TA=25C

TC=25C

PC

Junction Temperature

TJ

4

A

1

15

W

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test: Pulse Width ≤300μS, Duty Cycle≤10%

 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Current Gain-Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

SYMBOL

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

ICBO

IEBO

hFE 1

hFE 2

fT

Cob

tON

tSTG

tF

TEST CONDITIONS

IC =1mA, IE =0

IC =5mA, RBE=∞

IE =1mA, IC =0

IC =1A, IB =0.2A

IC =1A, IB =0.2A

VCB =400V, IE =0

VEB =5V, IC =0

VCE =5V, IC =1mA

VCE =5V, IC =0.2A

VCE =10V, IC =0.2A

VCB =10V, f =1MHz

IC =1.0A, IB1 =0.05A

IB2 = -0.5A, RL =200Ω

VCC=200V

MIN TYP MAX UNIT

800

V

400

V

8

V

0.8 V

1.5 V

10 μA

10 μA

45

120

180

20

MHz

20

pF

0.5 μs

2.5 μs

0.3 μs

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R213-017. C

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