TA8405S(2001) View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TA8405S
(Rev.:2001)

TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

Supply Voltage

Motor Drive Voltage

Output Current

PEAK

AVE.

Power Dissipation

Operating Temperature

Storage Temperature

Note 1: Duty 1 / 10, 100 ms

Note 2: No heat sink

SYMBOL

VCC

VS

IO (PEAK)

IO (AVE.)

PD

Topr

Tstg

RATING

25

25

1.0 (Note 1)

0.4

0.75 (Note 2)

−30~75

−55~150

UNIT

V

V

A

W

°C

°C

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, Ta = 25°C, VCC = 12 V, VS = 12 V)

CHARACTERISTIC

Supply Current

Input Operating

Voltage

1 (High)

2 (Low)

Input Current

Input Hysteresis Voltage

Upper

Output Saturation

Voltage

Lower

Upper

Lower

Output Transistor

Leakage Current

Upper

Lower

Upper

Diode Forward Voltage

Lower

Thermal Shut Down Operating

Temperature

SYMBOL

ICC1

ICC2

ICC3

VIN 1

VIN 2

IIN

∆VT

VSAT U−1

VSAT L−1

VSAT U−2

VSAT L−2

IL U

IL L

VF U

VF L

TSD

TEST

CIR−

CUIT

TEST CONDITION

1 Output open, CW / CCW mode

1 Output open, BRAKE mode

1 Output open, STOP mode

2

―

2

―

2 VIN = GND, source mode

2

―

3 IO = 0.4 A , VOUT−VS measure

3

IO = 0.4 A

VOUT−GND measure

3

VOUT−VS measure

IO = 1.0 A, ON LOAD : 20 ms

3 VOUT−GND measure

IO = 1.0 A, ON LOAD : 20 ms

5 VS = 25 V

5 VS = 25 V

4 IF = 1.0 A

4 IF = 1.0 A

― Tj

TA8405S

MIN TYP. MAX UNIT

―

7

15

―

15

38

mA

―

7

15

3.5

―

5.5

V

GND ―

1.2

―

4

60

µA

―

1.5

―

V

―

1.0

1.4

―

0.8

1.2

―

1.3

2.3

V

―

1.0

1.5

―

―

50

µA

―

―

50

―

2.1

―

V

―

1.6

―

―

130

―

°C

3

2001-06-13

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