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TAT7430B View Datasheet(PDF) - TriQuint Semiconductor

Part Name
Description
Manufacturer
TAT7430B
TriQuint
TriQuint Semiconductor TriQuint
TAT7430B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TAT7430B
CATV 75 pHEMT High Gain RF Amplifier
Specifications
Absolute Maximum Ratings1
Parameter
Storage Temperature
Device Voltage
Rating
-65 to +150 oC
+10 V
1. Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Vcc
Icc
TJ (for >106 hours MTTF)
Min Typ Max Units
5
8V
190
mA
150 oC
Electrical Specifications
Test conditions unless otherwise noted: 25ºC case temp, +8V Vsupply, DC to 1200 MHz
Parameter
Conditions Min
Operational Frequency Range
50
Gain
Gain Flatness
Noise Figure at 1 GHz
Input Return Loss
Output Return Loss
P1dB
Output IP3
See Note 1.
Output IP2
See Note 1.
CSO
See Note 2.
CTB
See Note 2.
Idd
Thermal Resistance (jnc. to case) jc
Notes:
1. At -21 dBm/tone at input.
2. 10 dBmV/ch at input, 80 ch flat NTSC
3. Electrical specifications are measured at specified test conditions.
4. Specifications are not guaranteed over all recommended operating conditions.
Typical
22
+/- 0.5
2.0
-22
-18
+22
+41
+65
-61
-81
190
Max
1002
32
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
mA
oC/W
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 7 -
Disclaimer: Subject to change without notice
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