TC1043 View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

TC1043

Linear Building Block – Low Power Voltage Reference with Dual Op Amp, Dual Comparator, and Shutdown Mode

Microchip Technology 

TC1043

1.0 ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin ........... (VSS – 0.3V) to (VDD +0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

These are stress ratings only and functional operation of the

device at these or any other conditions above those indi-

cated in the operation sections of the specifications is not

implied. Exposure to Absolute Maximum Rating conditions

for extended periods my affect device reliability.

TC1043 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD = 3V. Minimum and maximum values apply for TA = -40° to

+ 85°C, and VDD = 1.8V to 5.5V, unless otherwise specified.

Symbol

Parameter

Min.

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

IQ

Supply Current Operating

ISHDN

Supply Current, Shutdown

Shutdown Input

VIH

VIL

ISI

Op Amps

Input High Threshold

Input Low Threshold

Shutdown Input Current

TSEL

Select Time

TDESEL

ROUT(SD)

COUT(SD)

AVOL

VICMR

VOS

IB

VOS(DRIFT)

GBWP

Deselect Time

Output Resistance in Shutdown

Output Capacitance in Shutdown

Large Signal Voltage Gain

Common Mode Input Voltage Range

Input Offset Voltage

Input Bias Current

Input Offset Voltage Drift

Gain-Bandwidth Product

1.8

—

—

80% VDD

—

—

—

—

20

—

—

VSS - 0.2

-100

—

—

SR

VOUT

CMRR

PSRR

ISRC

ISINK

En

en

Slew Rate

Output Signal Swing

Common Mode Rejection Ratio

Power Supply Rejection Ratio

Output Source Current

Output Sink Current

Input Noise Voltage

Input Noise Voltage Density

—

VSS + 0.05

70

80

3

4

—

—

—

16

6

—

—

—

15

100

—

—

100

—

±100

±0.3

50

±4

90

35

—

—

—

—

—

10

125

5.5

V

30

µA All outputs unloaded,

SHDN = VDD

10

µA CMPTR2 and VREF Outputs

unloaded, SHDN = VSS

—

V

20% VDD

V

±100

nA

—

—

—

6

—

VDD + 0.2

±500

±1.5

100

—

—

—

VSS - 0.05

—

—

—

—

—

—

µsec

nsec

MΩ

pF

V/mV

V

(VOUT from SHDN = VIH)

RL = 10kΩ to VSS

(VOUT from SHDN = VIL)

RL = 10kΩ to VSS

SHDN = VSS

SHDN = VSS

RL = 10kΩ, VDD = 5V

µV

mV

pA

µV/°C

kHz

mV/

µsec

V

dB

dB

mA

mA

µVPP

nV/√Hz

VDD = 3V, VCM = 1.5V, TA =

25°C, TA = -40°C to 85°C

TA = 25°C, VCM = VDD to VSS

VDD = 3V, VCM = 1.5V

VDD = 1.8V to 5.5V

VO = VDD to VSS

CL = 100pF

RL = 1MΩ to GND

Gain = 1

VIN = VSS to VDD

RL = 10kΩ

TA = 25°C, VDD = 5V

VCM = VDD to VSS

TA = 25°C, VCM = VSS

VDD = VDD to VSS

IN+ = VDD, IN- = VSS

Output Shorted to VSS

VDD = 1.8V, Gain = 1

IN+ = VSS, IN- = VDD

Output Shorted to VDD

VDD = 1.8V, Gain = 1

0.1Hz to 10Hz

1kHz

DS21347B-page 2

© 2002 Microchip Technology Inc.

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