TC1413 View Datasheet(PDF) - TelCom Semiconductor Inc => Microchip
Part Name
Description
Manufacturer
TC1413 Datasheet PDF : 5 Pages
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3A HIGH SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 1800pF
70
60
50
40
TA = 85°C
30
TA = 25°C
20
TA = –40°C
10
4
6
8
10
12
14
16
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 1800pF
110
100
90
80
70
TA = 85°C
60
TA = 25°C
50
40
30
TA = –40°C
20
4
6
8
10
12
14
16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
40
TRISE
30
TFALL
20
10
0
0
1000
2000
3000
4000
5000
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
1
TC1413
TC1413N
Fall Time vs. Supply Voltage
CLOAD = 1800pF
2
70
60
50
40
TA = 85°C
3
30
TA = 25°C
20
10
4
TA = –40°C
6
8
10
12
14
16
VDD (VOLTS)
4
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 1800pF
100
90
80
70
60
TA = 85°C
5
50
TA = 25°C
40
30
TA = –40°C
20
4
6
8
10
12
VDD (VOLTS)
14
6 16
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
35
34
TD2
33
TD1
7
32
31
30
29
28
0
1000
2000
3000
4000
8 5000
CLOAD (pF)
4-205
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