TC4425MJA View Datasheet(PDF) - TelCom Semiconductor Inc => Microchip
Part Name
Description
Manufacturer
TC4425MJA Datasheet PDF : 7 Pages
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TC4423
TC4424
TC4425
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B ...... VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 55°C/W
PDIP RθJ-A ................................................... 125°C/W
PIN CONFIGURATIONS
PDIP RθJ-C ..................................................... 45°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ............................................ - 25°C to +85°C
E Version ........................................... - 40°C to +85°C
M Version ........................................ - 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
NC
IN A
NC
GND
GND
NC
IN B
NC
16-Pin SO Wide
1
16
2
15
3
14
4
13
TC4423
5
TC4424
12
6
TC4425
11
7
10
8
9
4423 4424 4425
NC
NC
NC
OUT A OUT A OUT A
OUT A OUT A OUT A
VDD VDD VDD
VDD VDD VDD
OUT B OUT B OUT B
OUT B OUT B OUT B
NC
NC
NC
8-Pin DIP
NC 1
IN A 2
GND 3
IN B 4
TC4423
TC4424
TC4425
4423 4424 4425
8 NC
NC
NC
7 OUT A OUT A OUT A
6 VDD VDD VDD
5 OUT B OUT B OUT B
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max
Input
VOH
Logic 1 High Input Voltage
VIL
Logic 0 Low Input Voltage
IIN
Input Current
Output
VOH
High Output Voltage
VOL
Low Output Voltage
RO
Output Resistance, High
RO
Output Resistance, Low
IPK
Peak Output Current
IREV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
IS
Power Supply Current
0V ≤ VIN ≤ VDD
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
Duty Cycle ≤ 2%
t ≤ 300 µsec
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
2.4
—
—
—
— 0.8
–1
—
1
VDD – 0.025 —
—
—
— 0.025
—
2.8
5
—
3.5
5
—
3
—
1.5
—
—
—
23 35
—
25 35
—
33 75
—
38 75
—
1.5
2.5
—
0.15 0.25
Unit
V
V
µA
V
V
Ω
Ω
A
A
nsec
nsec
nsec
nsec
mA
mA
4-238
TELCOM SEMICONDUCTOR, INC.
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