TC4425 View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

TC4425

3A Dual High-Speed Power MOSFET Drivers

Microchip Technology 

TC4423/TC4424/TC4425

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ................................................................+22V

Input Voltage, IN A or IN B

................................................ (VDD + 0.3V) to (GND – 5V)

Package Power Dissipation (TA ≤ 70°C)

DFN ......................................................................... Note 2

PDIP .......................................................................730 mW

SOIC.......................................................................470 mW

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.

Parameters

Sym

Min

Typ Max Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

2.4

—

—

V

Logic ‘0’, Low Input Voltage

VIL

—

—

0.8

V

Input Current

IIN

–1

—

1

µA 0V ≤ VIN ≤ VDD

Output

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Peak Output Current

Latch-Up Protection With-

stand Reverse Current

VOH

VOL

ROH

ROL

IPK

IREV

VDD – 0.025

—

—

—

—

—

—

—

2.8

3.5

3

>1.5

—

0.025

5

5

—

—

V

V

Ω IOUT = 10 mA, VDD = 18V

Ω IOUT = 10 mA, VDD = 18V

A

A Duty cycle ≤ 2%, t ≤ 300 µsec.

Switching Time (Note 1)

Rise Time

Fall Time

Delay Time

Delay Time

Power Supply

tR

—

23

35

ns Figure 4-1, Figure 4-2,

CL = 1800 pF

tF

—

25

35

ns Figure 4-1, Figure 4-2,

CL = 1800 pF

tD1

—

33

75

ns Figure 4-1, Figure 4-2,

CL = 1800 pF

tD2

—

38

75

ns Figure 4-1, Figure 4-2,

CL = 1800 pF

Power Supply Current

IS

—

—

Note 1: Switching times ensured by design.

1.5

0.15

2.5

0.25

mA VIN = 3V (Both inputs)

VIN = 0V (Both inputs)

2: Package power dissipation is dependent on the copper pad area on the PCB.

 2004 Microchip Technology Inc.

DS21421D-page 3

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