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TC646B View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
TC646B Datasheet PDF : 36 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TC646B/TC648B/TC649B
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Pulse-Width Modulator
PWM Frequency
fPWM
26
30
SENSE Input (TC646B & TC649B)
SENSE Input Threshold Voltage
VTH(SENSE)
50
70
with Respect to GND
Blanking time to ignore pulse due
tBLANK
3.0
to VOUT turn-on
FAULT / OTF Output
Output Low Voltage
VOL
Missing Pulse Detector Timer
tMP
32/f
Start-up Timer
tSTARTUP
32/f
Diagnostic Timer
tDIAG
3/f
Note 1: Ensured by design, tested during characterization.
2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f.
34
Hz CF = 1.0 µF
90
mV
µsec
0.3
V IOL = 2.5 mA
sec TC646B and TC649B, Note 2
sec Note 2
sec TC646B and TC649B
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 3.0V to 5.5V
Parameters
Sym
Min
Typ
Max
Units
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA
-40
+85
°C
TA
-40
+125
°C
TA
-65
+150
°C
Thermal Package Resistance, 8-Pin MSOP
θJA
200
°C/W
Thermal Package Resistance, 8-Pin SOIC
θJA
155
°C/W
Thermal Package Resistance, 8-Pin PDIP
θJA
125
°C/W
Conditions
DS21755B-page 4
2003 Microchip Technology Inc.

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