TCM812TERCTR View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
TCM812TERCTR Datasheet PDF : 16 Pages
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TCM811/TCM812
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (VDD to GND)........................................+6.0V
RESET, RESET.................................... - 0.3V to (VDD + 0.3V)
Input Current, VDD........................................................20 mA
Output Current, RESET, RESET...................................20 mA
Operating Temperature Range......................– 40°C to +85°C
Storage Temperature Range .......................– 65°C to +150°C
Maximum Junction Temperature, TS.............................. 150°C
*Notice: Stresses beyond those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other
conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
VDD = 5V for L/M versions, VDD = 3.3V for T/S versions, VDD = 3V for R version, VDD = 2.0V for F version.
Unless otherwise noted, TA = –40°C to +85°C. Typical values are at TA = +25°C. (Note 1)
Parameters
Sym Min
Typ Max Units
Conditions
VDD Range
VDD
1.0
1.1
—
5.5
—
5.5
V TCM811
TCM812
Supply Current
Reset Threshold
Reset Threshold Tempco
ICC
—
—
VTH
4.54
4.50
4.30
4.25
3.03
3.00
2.88
2.85
2.58
2.55
1.71
1.70
—
6
15
µA TCM81_L/M, VDD = 5.5V, IOUT = 0
4.75
10
µA TCM81_R/S/T/F, VDD = 3.6V,
IOUT = 0
4.63 4.72
—
4.75
V TCM81_L: TA = +25°C
V
TA = –40°C to +85°C
4.38 4.46
—
4.50
V TCM81_M: TA = +25°C
V
TA = –40°C to +85°C
3.08 3.14
—
3.15
V TCM81_T: TA = +25°C
V
TA = –40°C to +85°C
2.93 2.98
—
3.00
V TCM81_S: TA = +25°C
V
TA = –40°C to +85°C
2.63 2.68
—
2.70
V TCM81_R: TA = +25°C
V
TA = –40°C to +85°C
1.75 1.79
—
1.80
V TCM81_F: TA = +25°C
V
TA = –40°C to +85°C
30
— ppm/° C
VDD to Reset Delay
—
20
—
µs VDD = VTH to VTH –125 mV;
TCM81_L/M
—
5
—
µs VDD = VTH to VTH –125 mV;
TCM81_R/S/T/F
Reset Active Timeout Period tRP
140
MR Minimum Pulse Width
tMR
10
MR Glitch Immunity
—
280
560
—
—
100
—
ms VDD = VTH(MAX)
µs
ns
MR to Reset Propagation
tMD
—
0.5
—
µs
Delay
Note 1: Production testing done at TA = +25°C and +85°C, overtemperature limits are tested with periodic QA tests
in production.
DS21615C-page 2
© 2007 Microchip Technology Inc.
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