7025ERPQB45 View Datasheet(PDF) - MAXWELL TECHNOLOGIES
Part Name
Description
Manufacturer
7025ERPQB45 Datasheet PDF : 20 Pages
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(8K x 16-Bit) Dual Port RAM High-Speed CMOS
7025E
TABLE 7. 7025E AC ELECTRICAL CHARACTERISTICS FOR WRITE CYCLE
(VCC = 5V ± 10%, VSS = 0V, TA = -55 TO 125 °C)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Address Setup Time
-35
-45
tAS
0
0
ns
--
--
Write Pulse Width
-35
-45
tWP
ns
30
--
35
--
Write Recovery Time
-35
-45
tWR
0
0
ns
--
--
Data Valid to End of Write
-35
-45
Output High Z Time 2,3
-35
-45
tDW
ns
25
--
25
--
tHZ
ns
--
20
--
20
Data Hold Time
-35
-45
Write Select to Output in High Z 2,3
-35
-45
Output Active from End of Write 2,3,4
-35
-45
tDH
0
0
ns
--
--
tWZ
ns
--
20
--
20
tOW
0
0
ns
--
--
SEM Flag Write to Read Time
-35
-45
SEM Flag Contention Window
-35
-45
tSWRD
ns
10
--
10
--
tSPS
ns
10
--
10
--
1. To access RAM, CS = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CS = VIN and SEM = VIL. Either condition must
be valid for the entire tEW time.
2. Guaranteed by design.
3. Transition is measured ± 500 mV from low or high impedance voltage with load.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although
tDH and tDW.
1000586
12.19.01 Rev 2
All data sheets are subject to change without notice 5
©2001 Maxwell Technologies
All rights reserved.
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