Philips Semiconductors
TDA8922B
2 × 50 W class-D power amplifier
13.9 Curves measured in reference design
102
(THD + N)/S
(%)
10
001aab199
102
(THD + N)/S
(%)
10
001aab200
1
(1)
1
(1)
(2)
10−1
10−1
(2)
(3)
(3)
10−2
10−2
10−3
10−2
10−1
1
10
102
103
Po (W)
VP = ±26 V; 2 × 6 Ω SE configuration.
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 10. (THD + N)/S as a function of output power; SE
configuration with 2 × 6 Ω load.
102
(THD + N)/S
(%)
10
001aab201
10−3
10−2
10−1
1
10
102
Po (W)
VP = ±26 V; 2 × 8 Ω SE configuration.
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 11. (THD + N)/S as a function of output power; SE
configuration with 2 × 8 Ω load.
102
(THD + N)/S
(%)
10
001aab202
1
(1)
10−1
(2)
10−2
(3)
1
10−1
(1)
10−2
(2)
10−3
10−2
10−1
1
10
102
103
Po (W)
10−3
10
102
103
104
105
f (Hz)
VP = ±21 V; 1 × 8 Ω BTL configuration.
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 12. (THD + N)/S as a function of output power; BTL
configuration with 8 Ω load.
VP = ±26 V; 2 × 6 Ω SE configuration.
(1) Po = 10 W.
(2) Po = 1 W.
Fig 13. (THD + N)/S as function of frequency, SE
configuration with 2 × 6 Ω load.
9397 750 13357
Preliminary data sheet
Rev. 01 — 1 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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