TDA8931T View Datasheet(PDF) - Philips Electronics
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Description
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TDA8931T Datasheet PDF : 31 Pages
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Philips Semiconductors
13. Dynamic characteristics
Table 10: Characteristics
VP = 22 V; Tamb = 25 °C; RL = 4 Ω; unless otherwise specified.
Symbol Parameter
Conditions
Amplifier; SE channel
Po(max)
maximum output power
THD
Vn(o)
total harmonic distortion
noise output voltage
RL = 4 Ω; THD = 10 %
VP = 26 V
VP = 22 V
RL = 8 Ω; THD =10 %
VP = 30 V
Po = 1 W, fi = 1 kHz
Operating mode; inputs
shorted; gain = 20 dB,
AES17 brick wall filter
Gv(range)
η
gain adjust range
efficiency
PWM output: pin OUT (see Figure 4)
Po = 15 W
Vp = 22 V; RL = 4 Ω
Vp = 30 V; RL = 8 Ω
tr
tf
tdead
tr(LH)
tr(HL)
tW(min)
RDSon
output voltage rise time
output voltage fall time
dead time
response time of transition from
LOW-to-HIGH
response time of transition from
HIGH-to-LOW
minimum pulse width
drain-source on-state resistance of
output transistor
Vi(dif) = 70 mV
Vi(dif) = 3.3 V
Vi(dif) = 70 mV
Vi(dif) = 3.3 V
[1] Measured in the application board.
TDA8931
Power comparator 1 × 20 W
Min Typ Max Unit
[1]
21
22
-
W
15
16
-
W
15
[1] -
[1] -
16
-
W
0.02 0.1 %
128 150 µV
[1] 14
[1] 87
[1] 89
-
-
-
-
-
-
-
-
-
20
26
dB
89
-
%
91
-
%
20
-
ns
20
-
ns
0
-
ns
120 -
ns
100 -
ns
120 -
ns
100 -
ns
150 -
ns
0.22 0.3 Ω
9397 750 13847
Preliminary data sheet
Rev. 01 — 14 January 2004
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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