TEMT3700 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
TEMT3700 Datasheet PDF : 6 Pages
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TEMT3700
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
125
100
R thJA = 400 K/W
75
50
25
0
0 10 20 30 40 50 60 70 80 90 100
20376
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector ligth current
Angle of half sensitivity
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Rise time, fall time
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 1 kΩ
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 100 Ω
Cut-off frequency
VS = 5 V, IC = 2 mA, RL = 100 Ω
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
V(BR)CEO
ICEO
CCEO
Ica
ϕ
λp
λ0.1
λ0.5
VCEsat
tr/tf
tr/tf
fc
MIN.
70
0.25
TYP.
1
3
0.5
± 60
850
450 to 1080
620 to 980
0.15
6
2
180
MAX.
200
0.3
UNIT
V
nA
pF
mA
deg
nm
nm
nm
V
µs
µs
kHz
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
104
2.0
103
VCE = 20 V
102
101
1.8
V =5V
CE
1.6
E = 1 mW/cm2
e
λ = 950 nm
1.4
1.2
1.0
10
20
40
60
80
100
94 8304
T - Ambient Temperature (°C)
amb
Fig. 2 - Collector Dark Current vs. Ambient Temperature
0.8
0.6
0
20
40
60
80
100
94 8239
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
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2
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81555
Rev. 1.7, 10-Oct-08
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