TEMT3700-GS18 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
TEMT3700-GS18 Datasheet PDF : 6 Pages
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TEMT3700
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
10
1
0.1
0.01
VCE = 5 V
λ = 950 nm
0.001
0.01
0.1
1
10
94 8316
Ee - Irradiance (mW/cm²)
Fig. 4 - Collector Light Current vs. Irradiance
10
λ = 950 nm
1
Ee = 1 mW/cm²
0.5 mW/cm²
0.2 mW/cm²
0.1
0.1
94 8317
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
10
f = 1 MHz
8
6
4
2
0
0.1
1
10
100
94 8294
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
8
VCE = 5 V
6
RL = 100 Ω
λ = 950 nm
4
toff
2
ton
0
0 2 4 6 8 10 12 14
94 8293
IC - Collector Current (mA)
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
400
94 8348
600
800
1000
λ - Wavelength (nm)
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.6 0.4 0.2 0
94 8318
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
Document Number: 81555
Rev. 1.7, 10-Oct-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
3
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