TIM1414-18L-252 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TIM1414-18L-252

MICROWAVE POWER GaAs FET

Toshiba 

TIM1414-18L-252

Power Dissipation vs. Case Temperature

100

80

60

PT(W)

40

20

0

0

40

80

120

160

200

Tc (°C)

IM3 vs. Output Power Characteristics

-20

VDS= 9V

IDSQ≅ 4.4A

f= 14.5GHz

∆f= 5MHz

-30

IM3(dBc)

-40

-50

-60

30

32

34

36

38

40

Po(dBm), Single Carrier Level

4

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