TIM1011-15L(2006) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TIM1011-15L Datasheet PDF : 4 Pages
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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-15L
FEATURES
n HIGH POWER
P1dB=42.0dBm at 10.7GHz to 11.7GHz
n HIGH GAIN
G1dB=7.0dB at 10.7GHz to 11.7GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
P1dB
dBm 41.0 42.0
G1dB
VDS= 9V
dB 6.0 7.0
f = 11.7 to 12.7GHz
Drain Current
Gain Flatness
IDS1
∆G
A
4.5 5.5
dB ±0.8
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ηadd
%
31
IM3
Two-tone Test
dBc -42 -45
Po=30.0 dBm
IDS2 (Single Carrier Level) A
4.5 5.5
∆Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
100
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 4.8A
VDS= 3V
IDS= 145mA
VDS= 3V
VGS= 0V
IGS= -145µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS 3000
V -1.5 -3.0 -4.5
A
10.0 11.5
V
-5
°C/W 2.0 2.5
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product
Rev. Oct. 2006
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