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Part Name
Description
TIM1011-2L View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TIM1011-2L
MICROWAVE POWER GaAs FET
Toshiba
TIM1011-2L Datasheet PDF : 5 Pages
1
2
3
4
5
TIM1011-2L
POWER DISSIPATION VS. CASE TEMPERATURE
25
20
15
10
5
0
0
40
80
120
160
200
Tc (
℃
)
IM3
IM
v
3
s.
v
O
s.
U
O
T
U
P
T
U
P
T
U
P
T
O
P
W
OW
ER
ER
C
C
H
H
A
A
R
R
A
A
C
C
T
T
E
E
R
R
I
I
STIC
S
-10
f = 11.7 GHz
VDS = 9 V
IDS
≅
1.0 A
-20
∆
f= 5MHz
-30
-40
-50
-60
17
19
21
23
25
27
29
Po (dBm), Single Carrie
Po(dBm), Single Carrier
4
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